METAL OXIDE SEMICONDUCTOR TECHNOLOGY SCALING ISSUES AND THEIR RELATION TO SUBMICRON LITHOGRAPHYTASCH AF JR.1983; OPTICAL ENGINEERING; ISSN 0091-3286; USA; DA. 1983; VOL. 22; NO 2; PP. 176-180; BIBL. 6 REF.Article

INTRALEVEL HYBRID RESIST PROCESS FOR THE FABRICATION OF METAL OXIDE SEMICONDUCTOR DEVICES WITH SUBMICRON GATE LENGTHSHELBERT JN; SEESE PA; GONZALES AJ et al.1983; OPTICAL ENGINEERING; ISSN 0091-3286; USA; DA. 1983; VOL. 22; NO 2; PP. 185-189; BIBL. 6 REF.Article

STATE OF ART OF ACRYLATE RESISTS: AN OVERVIEW OF POLYMER STRUCTURE AND LITHOGRAPHICMOREAU WM.1983; OPTICAL ENGINEERING; ISSN 0091-3286; USA; DA. 1983; VOL. 22; NO 2; PP. 181-184; BIBL. 76 REF.Article

THE CARACTERISTICS AND PROPERTIES OF OPTIMISED AMORPHOUS SILICON FIELD EFFECT TRANSISTORSMACKENZIE KD; SNELL AJ; FRENCH I et al.1983; APPLIED PHYSICS. A, SOLIDS AND SURFACES; ISSN 0721-7250; DEU; DA. 1983; VOL. 31; NO 2; PP. 87-92; BIBL. 22 REF.Article

AN ELECTROTHERMAL MODEL FOR THRESHOLD SWITCHING IN THIN AMORPHOUS CHALCOGENIDE FILMSSHAW MP; SUBHANI KF.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 3; PP. 233-248; BIBL. 42 REF.Article

THEORETICAL ANALYSIS OF AMORPHOUS-SILICON FIELD-EFFECT-TRANSISTORSKISHIDA S; NARUKE Y; UCHIDA Y et al.1983; JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1983; VOL. 22; NO 3; PART. 1; PP. 511-517; BIBL. 7 REF.Article

SWITCHING BEHAVIOUR OF AMORPHOUS THRESHOLD DEVICES IN THE GAP CONFIGURATION.MADAN A; ALLISON J; THOMPSON MJ et al.1976; J. NON-CRYST. SOLIDS; NETHERL.; DA. 1976; VOL. 21; NO 1; PP. 1-21; BIBL. 15 REF.Article

A SELF-ALIGNMENT PROCESS FOR AMORPHOUS SILICON THIN FILM TRANSISTORSKODAMA T; TAKAGI N; KAWAI S et al.1982; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 7; PP. 187-189; BIBL. 12 REF.Article

TRANSFORMATION FROM OHMIC TO OFFSET BEHAVIOR FOR THE ON STATE OF AN AMORPHOUS SEMICONDUCTOR THRESHOLD SWITCH FOR INTERRUPTIONS GREATER THAN 12 NSVEZZOLI GC.1979; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1979; VOL. 35; NO 3; PP. 288-290; BIBL. 8 REF.Article

NOTE ON THE THICKNESS DEPENDENCE OF THE THRESHOLD VOLTAGE OF AMORPHOUS SWITCHING DEVICES.BARANCOK D; DIESKA P.1976; ACTA PHYS. SLOV.; TCHECOSL.; DA. 1976; VOL. 26; NO 4; PP. 277-280; BIBL. 6 REF.Article

THE ON-STATE OF THE AMORPHOUS SEMICONDUCTOR DEVICE.BUCKLEY WD.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 29; NO 11; PP. 743-746; BIBL. 4 REF.Article

AMORPHOUS SEMICONDUCTOR DEVICES: MEMORY AND SWITCHING MECHANISMLAKSHMINARAYAN KN; SRIVASTAVA KK; PANWAR OS et al.1981; J. INSTIT. ELECTRON. TELECOMMUNIC. ENGRS; IND; DA. 1981; VOL. 27; NO 1; PP. 16-19; BIBL. 9 REF.Article

REVERSIBLE MONOPOLAR SWITCHING IN VANADIUM-TELLURITE GLASS THRESHOLD DEVICESGATTEF E; DIMITRIEV Y.1979; PHILOS. MAG., B; GBR; DA. 1979; VOL. 40; NO 3; PP. 233-242; BIBL. 35 REF.Article

AMORPHOUS-SILICON FET ARRAY FOR LCD PANELKATOH K; YASUI M; KUNIYASU S et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 14; PP. 506-507; BIBL. 10 REF.Article

ELECTRIC FIELD LINE BENDING LIMITED ELASTOMER DEFORMATION IN AN A-SE TYPE DEFORMOGRAPHIC LIGHT WAVE.LAKATOS AI.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 6; PP. 2346-2355; BIBL. 9 REF.Article

DISPOSITIFS SEMICONDUCTEURS AMORPHESADLER D.1978; USP. FIZ. NAUK; SUN; DA. 1978; VOL. 125; NO 4; PP. 707-730; BIBL. 5 REF.Article

Theoretical and experimental study of the operation of ovonic switches in the relaxation oscillation mode. II: The discharging characteristics and the equivalent circuitsCALLAROTTI, R. C; SCHMIDT, P. E.Journal of applied physics. 1984, Vol 55, Num 8, pp 3148-3152, issn 0021-8979Article

Proposed vertical-type amorphous-silicon field-effect transistorsUCHIDA, Y; NARA, Y; MATSUMURA, M et al.IEEE electron device letters. 1984, Vol 5, Num 4, pp 105-107, issn 0741-3106Article

Electron-beam-induced information storage in hydrogenated amorphous silicon devicesYACOBI, B. G.Applied physics letters. 1984, Vol 44, Num 7, pp 695-697, issn 0003-6951Article

Comment on Threshold switching in chalcogenide-glass thin films. ReplyCHUN CHIANG; ADLER, D; SHUR, M. S et al.Journal of applied physics. 1984, Vol 56, Num 2, pp 578-580, issn 0021-8979Article

A 220×240 pixel a-Si TFT matrix transmission liquid crystal displaySUZUKI, K; AOKI, T; IKEDA, M et al.Proceedings of the society for information display. 1984, Vol 25, Num 1, pp 11-16, issn 0734-1768Article

Bias-stress-induced stretched-exponential time dependence of charge injection and trapping in amorphous thin-film transistorsLIBSCH, F. R; KANICHI, J.Applied physics letters. 1993, Vol 62, Num 11, pp 1286-1288, issn 0003-6951Article

Amorphous SiC/Si three-color detectorHSIUNG-KUANG TSAI; SI-CHEN LEE.Applied physics letters. 1988, Vol 52, Num 4, pp 275-277, issn 0003-6951Article

A self-alignment processed a-Si:H TFT matrix circuit for LCD panelsKAWAI, S; KODAMA, T; NASU, Y et al.Proceedings of the society for information display. 1984, Vol 25, Num 1, pp 21-24, issn 0734-1768Article

Decay of the electron-beam-induced current in hydrogenated amorphous silicon devicesYACOBI, B. G; HERRINGTON, C. R; MATSON, R. J et al.Journal of applied physics. 1984, Vol 56, Num 2, pp 557-559, issn 0021-8979Article